| 摘要 |
A method for producing a non-monocrystalline semiconductor device, such as amorphous silicon TFT, by forming at least two non-monocrystalline semiconductor films in successive manner on a substrate by plasma CVD, in which the film-growing surface and the interfaces of the formed films are constantly maintained in a plasma atmosphere until the end of film formation. In this manner the interface regions are protected from damage caused by the initial stage of plasma and eventual deposition of impurities in such regions. This is achieved, for example, by spreading the plasma area during the transfer of the substrate between the film-forming chambers.
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