Chemical vapor deposition method and apparatus therefore

摘要

Fixed amounts of a liquid source for a chemical vapor deposition process is supplied continuously from a source tank and through a liquid mass flow controller to a three-way valve. Inside the three-way valve, the liquid source is evaporated to generate a source gas by contacting a high-temperature carrier gas which flows therethrough and becomes mixed with the source gas. The gas mixture thus generated is supplied into a process chamber for a chemical vapor deposition process. The carrier gas may be heated by a gas heater before entering the three-way valve. Alternatively, the three-way valve may be enclosed inside a thermostatic container, the carrier gas being heated inside the container.