发明名称 |
METHOD FOR GROWING SINGLE CRYSTAL OF ZN-GROUP VI ELEMENT COMPOUND |
摘要 |
PURPOSE:To convert polycrystals of Zn-group VI element compound such as ZnSe into single crystal with high reproducibility. CONSTITUTION:The polycrystals 1 deposited from Zn-group VI element compound vapor are heat-treated, as they are stressed with more than 7kg/cm<2> totaling the inner stress and the outer stress by the clamping device 3 in the vapor atmosphere of the same element in group VI to give single crystal of the Zn-Vl element compound. |
申请公布号 |
JPH07138097(A) |
申请公布日期 |
1995.05.30 |
申请号 |
JP19930311201 |
申请日期 |
1993.11.16 |
申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
KURISU KENICHI |
分类号 |
C30B1/12;C30B29/48;H01L21/20;H01L33/28 |
主分类号 |
C30B1/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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