发明名称 METHOD FOR GROWING SINGLE CRYSTAL OF ZN-GROUP VI ELEMENT COMPOUND
摘要 PURPOSE:To convert polycrystals of Zn-group VI element compound such as ZnSe into single crystal with high reproducibility. CONSTITUTION:The polycrystals 1 deposited from Zn-group VI element compound vapor are heat-treated, as they are stressed with more than 7kg/cm<2> totaling the inner stress and the outer stress by the clamping device 3 in the vapor atmosphere of the same element in group VI to give single crystal of the Zn-Vl element compound.
申请公布号 JPH07138097(A) 申请公布日期 1995.05.30
申请号 JP19930311201 申请日期 1993.11.16
申请人 SUMITOMO ELECTRIC IND LTD 发明人 KURISU KENICHI
分类号 C30B1/12;C30B29/48;H01L21/20;H01L33/28 主分类号 C30B1/12
代理机构 代理人
主权项
地址