| 摘要 |
PURPOSE:To increase the efficiency of the output current by increasing the content ratio of the tellurium gradually from the side of the 2nd conducting layer toward the 1st conducting layer. CONSTITUTION:The sunlight is introduced within photoelectric conversion layer 2 from the side of conducting layer 3, and the output corresponding to the incident sunlight is led outside via conducting layer 1 and 3. In this case, the tellurium content ratio of layer 2 is increased gradually from the side of layer 3 toward layer 3, and thus the energy inhibition band of layer 2 is larger at the side of layer 3 than the side of layer 1. On the other hand, layer 2 as it is the P-type semiconductor varies its conduction band position at each position in the thickness direction gradually from layer 3 toward layer 1. And the electric field is formed within layer 2 to accelerate the minor carrier produced within layer 2 based on the incidence of the sunlight from layer 3 side toward the layer 1 side. As a result, the optical carriers produced within layer 2 can be collected to layer 3 in a highly efficient way since the rectifying contact is given between layer 3 and layer 2. |
