Thermistor made of diamond

摘要

Disclosed herein is a semiconductor device which is formed by covering the surface of a semiconductor element whose semiconductor layer (2) is made of diamond with an insulating protective film (9) of diamond. Even if the semiconductor device is placed under a high temperature of at least 300 DEG C or 500 DEG C in an oxygen atmosphere, no resistance change is caused by reaction with oxygen since the semiconductor diamond layer (2) is not directly exposed to the oxygen atmosphere. Thus, it is possible to stably maintain the characteristics of the semiconductor layer. In order to improve an effect of protecting the diamond semiconductor layer (2) against a high temperature, it is necessary to improve crystallinity of the diamond material employed for the insulating protective film.