Method for producing a gallium phosphide epitaxial wafer.

摘要

A method for producing a GaP epitaxial wafer used for fabrication of light emitting diodes having higher brightness than light emitting diodes fabricated from a GaP epitaxial wafer produced by a conventional method. The method comprises the steps of: preparing a GaP layered substrate (15) with one or more GaP layers on a GaP single crystal substrate (10) in the first series of liquid phase epitaxial growth; obtaining a layered GaP substrate (15a) by eliminating surface irregularities of said GaP layered substrate (15) by mechano-chemical polishing to make the surface to be planar; and then forming a GaP light emitting layer composite (19) on said layered GaP substrate (15a) in the second series of liquid phase epitaxial growth.