| 摘要 |
Semiconductor laser comprises a GaAs substrate (11) on which is an arsenide reflector (13), an arsenide optical amplifier (15), an adhesive layer (17) which fuses a phosphide nonlinear crystal (19) to the amplifier, and a phosphide second reflector (21). This (21) reflects light and the fundamental frequency but transmits light at twice this frequency and the two reflectors define a laser cavity, the laser generating light at the fundamental in response to an external energy source and the crystal doubling this to give a beam through the second reflector. Also claimed is a method of making the laser above. |
