发明名称 |
Method for interconnecting layers in a semiconductor device |
摘要 |
A method for interconnecting layers in a semiconductor device is disclosed. The device includes a lower conductive layer formed by capping a second conductive layer on a first conductive layer, a contact window formed in an inter-insulating layer on the lower conductive layer, and an upper conductive layer connected to the lower conductive layer through the contact window. The contact window is formed by removing a portion of the inter-insulating layer where the contact will be formed using a first etching gas, and removing a portion of the second conductive layer where the contact will be formed using a second etching gas. The contact resistance becomes uniform by preventing the formation of a non-volatile mixture in the contact window, and the reliability of the device is improved by planarizing the surface of the lower conductive layer. |
申请公布号 |
GB2260643(B) |
申请公布日期 |
1995.05.24 |
申请号 |
GB19910024550 |
申请日期 |
1991.11.20 |
申请人 |
* SAMSUNG ELECTRONICS CO LIMITED |
发明人 |
JIN-HONG * KIM;CHANG-LYONG * SONG |
分类号 |
H01L21/302;H01L21/3065;H01L21/311;H01L21/3213;H01L21/768;H01L23/522;(IPC1-7):H01L23/535 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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