| 摘要 |
PURPOSE:To shorten the data processing time for a mask pattern and to shorten the manufacturing process of the title device by a method wherein an aperture pattern for ion-implantation is specified to the configuration of a rectangle having a side parallel the the external shape reference direction of a transfer mask. CONSTITUTION:An aperture pattern 15 for ion-implantation, which is formed on a transfer mask 11, is formed into a rectangular configuration. This pattern 15 is formed in such a positional relation that its one side 15a becomes parallel to the extension direction of the external shape reference side 16 of the mask 11. At the time of manufacture of a semiconductor storage device, a gate region of a memory cell transistor 2d is covered with an aperture 13 of a resist film 10 formed by a mask pattern of the mask 11 and the area of the aperture on source and drain regions 3d and 4d is inhibited small. Thereby, impurity ions are implanted effectively only in the gate region of the transistor 2d and ion-implantation into the source and drain regions is reduced to the utmost. |
