SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

The method decreases the problems arising in the plasma etching process of metal layers. Also this method has an advantage in enhancing the performance of semiconductor device by discharging the electron, which is generated in patterning metal layers with etching process, with some other metal patterns on the semiconductor substrate. The method suits a semiconductor device which has a metal layer connected with each part of some resultant formed on the substrate. The method comprises the steps of forming metal patterns on the plain substrate that has nothing grown on its surface and of forming a doping region to be diffused and connecting it with the metal patterns.