Prodn. of a connection surface for a Si region comprises: (a) covering the Si region (3) with an etch stop layer; (b) applying a Si layer (10) on the etch stop layer; (c) applying a photomask (11) corresponding to the connection surface produced; (d) removing the Si layer (10) with the aid of the mask (11) selectively to the etch stop layer (9); (e) applying a metal (12) forming a silicide; and (f) producing the connection surface (13) in a siliconising step.
申请公布号
DE4339919(A1)
申请公布日期
1995.05.24
申请号
DE19934339919
申请日期
1993.11.23
申请人
SIEMENS AG, 80333 MUENCHEN, DE
发明人
RUDERER, ERWIN, DIPL.-PHYS., 85570 MARKT SCHWABEN, DE