TFT AND ITS MAKING METHOD

摘要

The thin film transistor has a concave-convex shaped gate and channel to obtain sufficient channel length in a restricted area. The method for manufacturing thin film transistor having a concave-convex shaped gate and channel comprises the steps of; (1) with a certain thickness; (B) forming a concave-convex shaped TFT gate electrode (2) by etching the silicon layer (2); (C) forming a TFT gate oxide layer (3) on a whole surface of a concave-convex shaped TFT gate electrode; (D) vaporizing a silicon layer to form a TFT channel (4); and (E) injecting ion to form TFT source and drain (5A,5B).