TFT AND ITS MAKING METHOD

摘要

The method is for manufacturing a bottom gate type thin film transistor having an etch-stopper layer. The method comprises steps; (A) forming a gate electrode pattern with certain thickness by vaporizing a metal layer on a glass; (B) forming a gate isolation layer, a semi-conductor layer, and a first metal layer by vaporizing process; (C) patterning a first metal layer using a photo-etching method; (D) forming an ohmic layer and removing a semi-conductor layer and outer side of an ohmic layer using reactive ion etching method to isolate devices; (E) patterning a source and a drain electrode by vaporizing a second metal and removing an ohmic layer between a first and a second metal layer; and (F) forming a protective layer.