MAKING METHOD OF TR.

摘要

The hot carrier effect of submicron MOSFET device is prevented by a buried lightly doped drain structure formed by the method. The method comprises the steps of; (A) forming a gate oxide layer and gate poly on a P-type silicon substrate; (B) implanting N-type low density impurity; (C) implanting argon ion; (D) forming BLDD by a thermal process; (E) forming a spacer on the side wall of a gate oxide layer and gate poly; and (F) forming a source and a drain region by injecting N-type high density impurity.