| 摘要 |
A method or apparatus for measuring the high-frequency of C-V characteristics of a MIS (e.g. MOS) device (2) is disclosed. The method comprises the steps of placing the device (2) in a shielding-box (3), shielding the device (2) from outside electromagnetic light, illuminating the device with a light of a pre-determined wavelength from a device (6, 9) to prevent induction of excess carriers at the surface of the device (2), applying a voltage of a high frequency to a gate electrode (13) of the device (2), and alternating a sweep direction of the voltage by an apparatus (7). The method and the apparatus accurately measure the capacitance in response to voltages applied to the gate electrode (13). <IMAGE> |
