METAL LAYER PATTERN SEPATATION METHOD OF SEMICONDUCTOR DEVICE

摘要

The method includes the steps of applying a first photoresist layer, an insulating layer and a second photoresist layer on a metal layer to be isolated into a number of regions, masking a mask having an isolation pattern and a dummy pattern (33) on the second photoresist layer, and exposing and etching the metal layer to pattern the metal layer (38), thereby forming isolation regions (35,36) between patterns into the metal layer. the method uses a dummy pattern to minimise the polymer (37) generation upon etching of the first photoresist layer.