| 摘要 |
This device prevents the Smear Effect by a deep implant photodiode and a twin well structure. Also, the device minimizes the Blooming effect because of the deep junction depth of n+-type phtodiode and reduces the Smear Effect. The device comprises the steps of: making the junction depth of the p-type well (2) of a photodiode (4) pole on the substrate (1) thinner than that of a p-type well (3) of a shift resistor (5) width; forming the junction depth of the p-type well of the photodiode (4) is deeper than that of the p-type well of the shift resistor (5) width; and making the structure of the photodiode shaped like a bell with a deep implant photodiode and a twin well structure.
|
