| 摘要 |
PURPOSE:To detect and correct photomask pattern defects depending on their type and locations. CONSTITUTION:A method is provided for detecting and/or correcting defects of a pattern formed on a photomask, wherein a distance (if necessary, size of fault, Cr defect or shifter defect,) from the edge 41 of a pattern 4 to a defect is detected by the use of differential waveforms 6 (6a to 6d) or the like, and the distance concerned is taken into consideration. A device for detecting and correcting photomask pattern defects is equipped with an image recognition means which recognizes the image of a photomask, a differentiating circuit which produces differential waveforms of the intensity of light transmitted through the photomask, and a comparative discriminating circuit which discriminates faults. |
