| 摘要 |
<p>PURPOSE:To reduce the number of photomasks to be used for patterning of signal lines, thereby making it possible to reduce the production cost, to suppress the generation of the residue of transparent conductive film and to suppress the generation of G/D shorting. CONSTITUTION:After an ITO film 2 is formed on the surface of a transparent glass substrate 1, the ITO film 2 is polycrystallized and thereafter, a Cr (or Ti) film 3 and an Al alloy film 4 are successively formed to form three-layered films. The Al alloy film 4 is first dry etched by using a gaseous mixture composed of BCl3 and Cl2 with a photoresist film 5 of a prescribed shape as a mask. Next, the Cr (or Ti) film 3 is dry-etched by using a gaseous mixture composed of Cl2 and O2 (in the case of Ti, BCl3 and Cl2) and thereafter, the ITO film 2 is dry etched by using a gaseous mixture composed of CH3OH and Ar to form the three-layered films of the prescribed patterns in signal line and pixel electrode parts. The Al alloy films 4 and Cr (or Ti) films 3 of the pixel electrode parts are removed.</p> |
