发明名称 Etching method
摘要 Reactive ion etching of diamond using oxygen plasma roughs the surface of diamond due to the strong bombardment of oxygen ions with various kinetic energy. A metal grid with holes is installed between the oxygen plasma and the diamond. Since the metal grid is biased in order to prevent oxygen plasma from being in contact with the diamond, the oxygen ions which have passed the grid will bombard the surface of the diamond with common, low energy. The etched surface becomes smooth.
申请公布号 US5417798(A) 申请公布日期 1995.05.23
申请号 US19920824091 申请日期 1992.01.22
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 NISHIBAYASHI, YOSHIKI;FUJIMORI, NAOJI
分类号 C23F4/00;H01J37/32;H01L21/302;H01L21/3065;(IPC1-7):H01L21/00 主分类号 C23F4/00
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