发明名称 |
Process for formation of memory cell where capacitor is disposed below a transistor |
摘要 |
A semiconductor memory cell and a process for formation thereof is disclosed. A capacitor is disposed below a transistor, so that a DRAM cell that may be suitable for a high density semiconductor device is produced. A semiconductor device according to the present invention includes: a buried capacitor consisting of a storage electrode, a dielectric layer and a plate electrode formed on a substrate in a planar form; and a transistor formed above the capacitor, a source/drain region of the transistor being connected to the storage electrode of the capacitor.
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申请公布号 |
US5418177(A) |
申请公布日期 |
1995.05.23 |
申请号 |
US19940207769 |
申请日期 |
1994.03.07 |
申请人 |
GOLDSTAR ELECTRON CO., LTD. |
发明人 |
CHOI, JONG M. |
分类号 |
H01L27/10;H01L21/8242;H01L27/108;H01L27/12;(IPC1-7):H01L21/70;H01L27/00 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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