发明名称 SI TRANSFER MASK AND MANUFACTURE OF SI TRANSFER MASK
摘要 <p>PURPOSE:To reduce foreign matter like Si dust and provide an Si transfer mask of high reliability, by forming the Si transfer mask which is used in the multi-shot lithography system of an electron beam lithography equipment, by the combination of dry etching and anisotropic etching. CONSTITUTION:A transfer pattern 4 and a pattern 5 for a chip are formed on one surface of a sticking Si substrate by dry etching, and a protective film is formed. Aperture patterns 7 and 8 formed on the other surface of the substrate are protected by using sealing agent of silicon. By anisotropically etching a water en bloc, an Si transfer mask is turned into a ship. Thereby the Si transfer mask wherein the peeling of an anti-static film and the charging-up and not generated can be obtained, and drawing of high precision is realized.</p>
申请公布号 JPH07135129(A) 申请公布日期 1995.05.23
申请号 JP19930151684 申请日期 1993.06.23
申请人 HITACHI LTD 发明人 KAGAMI TERUYUKI;YAITA SAKAE;KATANE JIRO;TANABE MITSUO;NAKAYAMA YOSHINORI;SATO HIDETOSHI
分类号 H01L21/027;G03F1/20;G03F1/40;(IPC1-7):H01L21/027 主分类号 H01L21/027
代理机构 代理人
主权项
地址