摘要 |
<p>PURPOSE:To reduce foreign matter like Si dust and provide an Si transfer mask of high reliability, by forming the Si transfer mask which is used in the multi-shot lithography system of an electron beam lithography equipment, by the combination of dry etching and anisotropic etching. CONSTITUTION:A transfer pattern 4 and a pattern 5 for a chip are formed on one surface of a sticking Si substrate by dry etching, and a protective film is formed. Aperture patterns 7 and 8 formed on the other surface of the substrate are protected by using sealing agent of silicon. By anisotropically etching a water en bloc, an Si transfer mask is turned into a ship. Thereby the Si transfer mask wherein the peeling of an anti-static film and the charging-up and not generated can be obtained, and drawing of high precision is realized.</p> |