THIN FILM SEMICONDUCTOR INTEGRATED CIRCUIT AND ITS FABRICATION

摘要

PURPOSE:To allow the modification of the width of high resistance region depending on the required characteristics and reliability by connecting the source-drain region of at least one thin film transistor with a wiring formed of same film as other gate electrode through a metal wiring formed on an layer insulator. CONSTITUTION:A layer insulator 117 and the anode oxide 112 of a wiring 108 are etched to make a contact hole 119 at the source-drain of a TFT. Multilayer wirings 120-125 of titanium nitride and aluminium are then formed wherein the wiring 124 is connected with a pixel electrode 118 and the wiring 125 is connected with gate electrodes 106, 107. Each of TFTs 126, 127 formed on a same substrate has an active layer of crystalline silicon and suitable for high speed operation because of its narrow high resistance region whereas a TFT 128 has an active layer of amorphous silicon and suitable for low leak current operation because of its wide high resistance region.