发明名称 Apparatus for repairing an electrically short-circuited semiconductor device
摘要 An apparatus for repairing a defective semiconductor device having an electrically short-circuited portion, wherein the semiconductor device includes a semiconductor thin film and a conductive thin film disposed in the named order on a conductive surface of a substrate and in which the conductive thin film and the conductive surface of the substrate are electrically short-circuited at a pinhole occurring in the semiconductor thin film to form an electrically short-circuited portion so that the semiconductor device is defective. The apparatus includes a substrate holding unit for holding the substrate of the defective semiconductor device and an electrode arranged above the substrate holding unit so that, when the defective semiconductor is positioned on the substrate holding unit, there is a predetermined distance between the electrode and the conductive thin film of the defective semiconductor device, the electrode being capable of moving in relation to the substrate of the defective semiconductor device. The apparatus further includes a voltage applying unit for applying a desired voltage to the electrode, wherein discharge is caused between the electrode and the conductive thin film of the defective semiconductor device by applying a desired voltage to the electrode through the voltage applying means to thereby modify a region of the conductive thin film of the defective semiconductor device in electrical contact with the conductive surface of the substrate of the defective semiconductor device.
申请公布号 US5418680(A) 申请公布日期 1995.05.23
申请号 US19930155655 申请日期 1993.11.22
申请人 CANON KABUSHIKI KAISHA 发明人 SAITO, KEISHI;AOIKE, TATSUYUKI;NIWA, MITSUYUKI;KARIYA, TOSHIMITSU;KODA, YUZO
分类号 H01L21/28;H01L31/0224;H01L31/0392;H01L31/20;(IPC1-7):H05F7/00 主分类号 H01L21/28
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