发明名称 |
C-axis oriented high temperature superconductors deposited onto single crystals of gadolinium gallium garnet and method of making the same |
摘要 |
c-axis oriented microwave quality HTSC films are deposited onto single crystals of gadolinium gallium garnet (GGG) using pulsed laser deposition (PLD) with conditions of 85 mTorr of oxygen partial pressure, a block temperature of 730 DEG C., a substrate surface temperature of 790 DEG C. and a laser fluence of 1 to 2 Joules/cm2 at the target, a laser repetition rate of 10 Hz and a target to substrate distance of 7 cm and in which the a and b lattice parameters of the GGG exhibit a mismatch of less than 2.5 percent with the a and b lattice parameters of the HTSC.
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申请公布号 |
US5418215(A) |
申请公布日期 |
1995.05.23 |
申请号 |
US19940228788 |
申请日期 |
1994.04.12 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE ARMY |
发明人 |
TAUBER, ARTHUR;TIDROW, STEVEN C. |
分类号 |
H01L39/24;(IPC1-7):B32B9/00 |
主分类号 |
H01L39/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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