发明名称 C-axis oriented high temperature superconductors deposited onto single crystals of gadolinium gallium garnet and method of making the same
摘要 c-axis oriented microwave quality HTSC films are deposited onto single crystals of gadolinium gallium garnet (GGG) using pulsed laser deposition (PLD) with conditions of 85 mTorr of oxygen partial pressure, a block temperature of 730 DEG C., a substrate surface temperature of 790 DEG C. and a laser fluence of 1 to 2 Joules/cm2 at the target, a laser repetition rate of 10 Hz and a target to substrate distance of 7 cm and in which the a and b lattice parameters of the GGG exhibit a mismatch of less than 2.5 percent with the a and b lattice parameters of the HTSC.
申请公布号 US5418215(A) 申请公布日期 1995.05.23
申请号 US19940228788 申请日期 1994.04.12
申请人 THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE ARMY 发明人 TAUBER, ARTHUR;TIDROW, STEVEN C.
分类号 H01L39/24;(IPC1-7):B32B9/00 主分类号 H01L39/24
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