| 摘要 |
1,192,341. Semi-conductor diode. WESTINGHOUSE ELECTRIC CORP. 15 Jan., 1969 [31 Jan., 1968], No. 2304/69. Heading H1K. The silicon wafer 112 of a junction diode is joined between two electrodes 123, 124 of tungsten, molybdenum, tantalum or of base alloys of these metals. The edge surface of the wafer is made concave by etching so that the wafer will not be damaged by the pressure applied during the application of the epoxy resin encapsulation 140. The thickness of the encapsulation is made at least equal to the thickness of the soldered-on leads to minimize micro fracturing around the lead-encapsulation interface caused by thermal cycling in operation. The shoulder of one end of the encapsulation is rounded 150 so that the orientation of the diode may be known.
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