| 摘要 |
PURPOSE:To provide a means to control the etching amt. of a phase shifter at high accuracy relating to a correcting method for phase shift mask and to a substrate for the phase shift mask. CONSTITUTION:A first transparent material layer 2 and a second transparent material layer 3 are successively formed on a transparent substrate 1 to obtain a substrate for a phase shift mask. The first transparent material layer 2 has a higher etching rate for the first etching method than the transparent substrate and has such a film thickness that the phase of exposure light is substantially retarded by 180 deg.. The second transparent material layer 2 has a higher etching rate for the second etching method than the first transparent material layer and has such a film thickness that the phase of exposure light is substantially retarded by 180 deg.. The phase shift mask is corrected by etching the second transparent material layer 3 while using the first transparent material layer 2 as the stopper for etching and by etching the first transparent maternal layer 2 while using the transparent substrate 1 as the stopper for etching so that projection-type defects produced in the transparent substrate layers are removed and that recession-type defects are removed with transparent material layers under the defect. Thus, phases of exposure light adjacent to each other on the edge part are made different from each other by substantially + or -180 deg.. |
