| 摘要 |
PURPOSE:To fabricate TFTs having different characteristics on one substrate through substantially identical process by partially improving the crystallinity of a semiconductor film deposited on a substrate through irradiation with a pulse laser light or a light of equivalent intensity and then controlling the characteristics of a TFT thus obtained. CONSTITUTION:N type and P type lightly doped impurity regions 121, 123 are formed and function as a high resistance semiconductor region along with an offset region where the implantation of impurity elements is blocked by an anode oxide. Furthermore, an appropriate metal film, e.g. a titanium film 124, is deposited by sputtering. It is then irradiated with KrF excimer laser to cause reaction between the metal film and silicon in an active layer thus forming metal silicide regions (or low resistance layers) 125-127. This structure realizes a TFT integrated circuit having excellent characteristics as a whole, especially a monolithic active matrix circuit. |
