| 摘要 |
PURPOSE:To improve the planar alignment precision of an element such as a mask, etc., on a substrate by a method wherein the second film is formed on the first film on a substrate so as to pattern the second film making use of the stepped parts formed on the surface of the second film by the alignment trenches existing in the first film. CONSTITUTION:The patterns including the alignment trenches are formed in the first film 104 formed on a semiconductor substrate 101. Next, the first film 104 is filled up with a filler 120 to flatten the surface of the film 104. Next, the filler 120 in the alignment trenches out of the first flattened film 104 is removed to reform the original trenches. Next, the second film 121 is formed on the first film 104 patterning the second film 121 making use of the stepped parts formed on the surface of the second film 121 by the alignment trenches existing in the first film 104. Through these procedures, the planar alignment precision of an element such as a mask, etc., on the semiconductor substrate 101 can be improved. |
