| 摘要 |
PURPOSE:To effectively prevent the adhesion of deposits caused by a solution reaction and to extremely reduce the plane defect density of a formed film by applying ultrasonic wave or sound wave to a solution in the growth of a metallic chalcogenide film. CONSTITUTION:The metallic chalcogenide film is formed on the surface of a substrate by applying ultrasonic wave or sound wave to the solution containing chalcogenide ions and metallic ions. In the method for applying ultrasonic wave, the usual piezoelectric element, collector element or mechanical vibration can be used, and the frequency thereof is preferably used in 0.1Hz to 1MHz, more preferably in 100Hz to 500kHz. |
