| 摘要 |
PURPOSE:To reduce leak current by forming a compound semiconductor current block layer of opposite conductivity type having a mesa type recess on a compound semiconductor light confinement layer of first conductivity type, and then forming a compound semiconductor light confinement layer of opposite conductivity type on the layer while covering a second compound semiconductor light confinement layer of first conductivity type and a light emission layer. CONSTITUTION:A compound semiconductor light confinement layer 22 of first conductivity type is formed on an n-type substrate 21 having plane orientation of [001] and then a compound semiconductor current block layer 24 of opposite conductivity type having a 'hooked' mesa type recess is formed the layer 22. A light emission layer 27 having partial stripe is then formed on a second compound semiconductor light confinement layer 26 covering the entire surface including the recess. Furthermore, a compound semiconductor light confinement layer of opposite conductivity type is formed covering the light emission layer 27. This structure reduces the leak current and enhances the emission efficiency. |
