SEMICONDUCTOR DEVICE ISOLATION METHOD

摘要

The method uses a LOCOS (local oxidation of silicon) isolation process, and includes the steps of maintaining an N2 atmosphere during a temp. rising profile, a temp. falling profile and a low temp. stable profile of 600-700 deg.C and maintaining a wet oxidation atmosphere during a high temp. stable profile of 900-1100 deg.C, thereby forming a field oxide film using the theremal oxidation process cnditions to minimise the defects of silicon substrate.