CVD reactor for improved film thickness uniformity deposition.

摘要

A chemical vapor deposition reactor (50) comprises in combination a nozzle (52) and means (54) for equalizing a reactant chemistry and a flux of reactants. The nozzle is disposed within a chamber (15) opposite a susceptor (14) upon which a substrate (56) is supported during chemical deposition of a film upon a surface of the substrate from a reactant gas released into the chamber by the nozzle. The nozzle comprises an inlet port (58) for receiving the reactant gas from a gas supply and an outlet port (60) for releasing the reactant gas therethrough. The equalizing means substantially equalizes a reactant chemistry and a flux of reactants uniformly across the surface of the substrate.