摘要 |
In a plasma-CVD method and apparatus, plasma is formed from a film material gas in a process chamber and, in the plasma, a film is deposited on a substrate disposed in the process chamber. Formation of the plasma from the material gas is performed by application of an rf-power prepared by effecting an amplitude modulation on a basic rf-power having a frequency in a range from 10MHz to 200MHz. A modulation frequency of the amplitude modulation is in a range from 1/1000 to 1/10 of the frequency of the basic rf-power. Alternatively, the rf-power is prepared by effecting on the basic rf-power a first amplitude modulation at a frequency in a range from 1/1000 to 1/10 of the frequency of the basic rf-power, and additionally effecting a second amplitude modulation on the modulated rf-power. A modulation frequency of the second amplitude modulation is in a range from 1/100 to 100 times the modulation frequency of the first amplitude modulation. |
申请人 |
NISSIN ELECTRIC COMPANY, LIMITED |
发明人 |
NAKAHIGASHI, TAKAHIRO, C/O NISSIN ELEC. CO., LTD.;MURAKAMI, HIROSHI, C/O NISSIN ELEC. CO., LTD.;OTANI, SATOSHI, C/O NISSIN ELEC. CO., LTD.;TABATA, TAKAO, C/O NISSIN ELEC. CO., LTD.;MAEDA, HIROSHI, C/O NISSIN ELEC. CO., LTD.;KIRIMURA, HIROYA, C/O NISSIN ELEC. CO., LTD.;KUWAHARA, HAJIME, C/O NISSIN ELEC. CO., LTD. |