A semiconductor device with high heat conductivity.

摘要

A VCSEL having a first mirror stack (12) positioned on the surface of a substrate (10), an active region (13) positioned on the first mirror stack and substantially coextensive therewith, and a second mirror stack (14) positioned on the active region, the second mirror stack forming a ridge or mesa (16) having a side surface (31). A metal contact layer (40) is positioned on the side surface of the ridge or mesa and on portions of an end of the ridge or mesa to define a light emitting area (45), and a layer of diamond-like material (50) is electrolytically plated on the metal contact layer so as to form a heat conductor to remove heat from the laser.