LC element, semiconductor device, and LC element manufacturing method.

摘要

An LC element and an semiconductor device comprising a second electrode (26) having a predetermined shape formed in direct contact with the surface of a semiconductor substrate (30), and a first electrode (10) having a predetermined shape formed interspaced by an insulation layer (28) on the semiconductor substrate surface; and a method of manufacturing the LC element. A channel (22) formed along the first electrode (10) on application of a predetermined gate voltage to a control electrode connected to the first electrode (10) and the second electrode (26) respectively function as inductors, while a distributed constant type capacitor is also formed between these; and by using the channel (22) as a signal transmission line, the LC element and a semiconductor device give excellent attenuation characteristics. The LC element and semiconductor device are easily manufactured, while parts assembly work in subsequent processing can be abbreviated, formation as a portion of an IC or LSI device is possible, and characteristics can also be controlled.