Method for Preparation of Silicon Nitride Gallium Diffusion Barrier for Use in Molecular Beam Epitaxial Growth of Gallium Arsenide,申请号CA19942118356-传众专利搜索

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发明名称	Method for Preparation of Silicon Nitride Gallium Diffusion Barrier for Use in Molecular Beam Epitaxial Growth of Gallium Arsenide
摘要
申请公布号	CA2118356(A1)	申请公布日期	1995.05.17
申请号	CA19942118356	申请日期	1994.10.18
申请人	AMERICAN TELEPHONE AND TELEGRAPH COMPANY	发明人	CUNNINGHAM, JOHN E.;GOOSSEN, KEITH W.;JAN, WILLIAM Y.;WALKER, JAMES A.
分类号	C23C16/50;H01L21/203;H01L21/205;H01L21/318;(IPC1-7):C30C25/02;C30B25/18;C30B29/42;H01L21/22;H01L21/18;H01L21/31	主分类号	C23C16/50
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