Plasma etching using xenon.

摘要

A process for selectively etching a substrate (20), having grain boundaries and a resist material thereon, is described. The substrate (20) is placed into an etch zone (54) and a process gas comprising a primary etchant, a secondary etchant, and xenon is introduced into the etch zone. A plasma is generated in the zone to form an etch gas from the process gas, that substantially anisotropically etches the substrate at fast rates, with good selectivity, and reduced profile microloading. Preferably the primary etchant comprises C12, and the secondary etchant comprises BC13.