发明名称 |
Integrated circuit fabrication. |
摘要 |
A method of fabricating integrated circuits is disclosed. A layer of doped silicon dioxide (e.g., 25) is deposited over a partially fabricated integrated circuit. The doped silicon dioxide (e.g., 25) is heated to permit it to attract sodium ions. After the doped silicon dioxide has been heated, it is removed by an etching process which exhibits great selectivity to the remaining underlying portion of the integrated circuit. |
申请公布号 |
EP0601723(A3) |
申请公布日期 |
1995.05.17 |
申请号 |
EP19930309217 |
申请日期 |
1993.11.18 |
申请人 |
AMERICAN TELEPHONE & TELEGRAPH |
发明人 |
LEE KUO-HUA;YU CHEN-HUA DOUGLAS |
分类号 |
H01L21/336;H01L21/3105;H01L21/322;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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