| 摘要 |
<p>1,200,534. Integrated circuits. SIEMENS A.G. 14 Nov., 1968 [15 Nov., 1967], No. 54060/68. Heading H1K. The various functional stages of an integrated circuit are accommodated in a number of Si layers 3, 3a, 3b, each of which is grown epitaxially on a corresponding insulating film 2, 2a, 2b of aluminium silicates, each film in turn being grown epitaxially on the underlying Si layer. Interconnections between the Si layers 3 &c. are by channels 4 containing epitaxially deposited Si. The lowermost insulating film 2 is grown epitaxially on a Si substrate 1 which may contain circuit elements common to a number of functional stages. Current supply and earth connections 5 may be applied to the substrate 1 while signal and control connections 6 may be applied to the uppermost Si layer 3b through a final insulating film 2c of aluminium silicates. The aluminium silicate films comprise at least 85% Al 2 O 3 + at most 15% SiO 2 (measured in terms of volume in the gaseous phase).</p> |
