METHOD OF FORMING MINUTE RESIST PATTERN

摘要

The method includes the steps of applying a resist (7) having an active group by a silyration reaction on a substrate (1), soft-baking the resist (7) to implant silicon materials into the resist layer (7) to form a silicon implantation layer (8), using a mask (4) to expose the resist layer (7), removing the exposed resist layer to form an upper resist pattern (10), and etching the resist layer by using an O2 plasma etching process to remove the residual resist layer (7) to form a resist pattern (8A) with a vertical profile, the layer (8) being oxidized to form a oxide film (6) used as a mask, thereby forming fine patterns on the semiconductor substrate.