| 发明名称 |
Electrostatic discharge protection |
| 摘要 |
An ESD protection diode for a CMOS or BiCMOS integrated circuit formed by imbedding a Zener diode in the drain of a MOS device used as a protection diode. The Zener diode may be formed with the preexisting process steps of a BiCMOS process, and it provides a low voltage trigger for avalanche breakdown in the MOS ESD protection diode.
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| 申请公布号 |
US5416351(A) |
申请公布日期 |
1995.05.16 |
| 申请号 |
US19920984187 |
申请日期 |
1992.11.20 |
| 申请人 |
HARRIS CORPORATION |
发明人 |
ITO, AKIRA;CHURCH, MICHAEL D. |
| 分类号 |
G05F3/30;G11C27/02;H01L21/8249;H01L27/02;H01L27/06;H03F1/52;H03F3/50;H03G1/00;H03K5/15;H03K17/22;H03M1/16;H03M1/36;(IPC1-7):H01L29/860 |
主分类号 |
G05F3/30 |
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