METHOD OF WET ETCHING ON OXIDE LAYER

摘要

The method includes the steps of inclining a carrier support of an etch reservoir at 15-25 degree, and immersing the exposed and patterned wafers into the etch reservoir to etch the oxide film formed on the wafer, thereby inclining the carrier to discharge the air bubbles generated on the wafer to the outside of the reservoir through semicircular holes formed at the wall of the reservoir. The carrier support is not contacted with the wall surface of the reservoir. The method improves the etching yield.