METHOD OF FORMING POSITIVE TYPE RESIST PATTERN

摘要

The method includes the steps of applying a photoresist (2) on a substrate (1) to expose the upper resist portion by a mask to convert the exposed resist region into an acid portion (9), performing an amine bake process by using amonia as a catalyst to form a decarboxylation reaction material region (11) not reacting with lights, exposing the whole resist surface to ultraviolet rays to convert the residual resist region into an acid portion (9), implanting silicon material into the acid portion (9), oxidizing the Si implanted resist region by an O2 plasma treatment to form a mask, and removing the residual region (11) and the lower resist (2) thereof, thereby using positive resist processes in a lithography process to form a microresist pattern (20).