| 摘要 |
The method includes the steps of applying a first photoresist film (2a) on the metallic patterns (1) having a single device to soft-bake the film (2a), exposing the film (2a) to ultraviolet rays to form a first photoresist pattern (2), removing the residual photoresist to post-bake the photoresist pattern, forming a thin metal layer (3) for a plating thereon by an ion coater forming a second photoresist pattern (4) thereon by masking, exposing and developing, to post-bake the pattern (4), immersing the wafer in a plating bath to form a metal plating layer (5a), and removing the patterns (2,4) and the residual layer (3), thereby forming an air bridge pattern (5) for connecting between the two metal patterns (1).
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