PHOTOETCHING METHOD USING MULTILAYERRESIST

摘要

(1) coating a process substrate with photoresist to form a first resist layer first resist layer and silylation of the surface to form a silylated layer ; (2) glassifying with 02 to form a glassified layer ; (3) coating the glassified layer with photoresist to form a second resist layer; (4) selective exposure and development of the second resist lager in a given pattern; and (5) etching the glassified layer and the first resist layer using the second resist layer as mask. Prod. of a fine pattern is simplified and the productivity id increased, since the glassified layer is used as intermediate layer.