| 摘要 |
PURPOSE:To enable a single-crystallization of an insular region having a large area by thickly forming a separating layer only on the upper surface of an insular region to remarkably reduce the temperature of the center from the periphery, thereby effectively improving the yield by the single crystallization. CONSTITUTION:A polysilicon film is formed on an insulating film, then coated with an SiO2 film, and then photoetched to form insulator regions 8. Then, an SiO2 film is formed on the insular regions by thermal oxidation, and a thick SiO2 film 9 is formed only on the upper surfaces of the insular regions. After an Si3N4 film 6 and an SiO2 film 7 are sequentially formed, a laser is emitted. Then, since the film 9 having a low thermal conductivity is thickly formed on the upper surface, the temperature of the region 8 become at the center remarkably lower than the periphery. Thus, a single crystallization is effectively performed to improve the yield and the enable single crystallization even at the insular regions having large area. |
