发明名称 Rotation induced superlattice
摘要 This invention describes a multi-deposition system, whereby directing elemental or molecular source fluxes across a substrate in an asymmetrical manner and rotating the substrate at low rotation speeds, a superlattice is formed having a composition of A(x- DELTA x)B(1-(x- DELTA x))/A(x+ DELTA x)B(1-(x+ DELTA x) where DELTA x is a function of the nonuniform focusing of the elemental or molecular source fluxes A and B. More specifically, superlattices 18 are formed in the ternary and quaternary In(GaAl)As alloys on InP by molecular beam epitaxy without mechanical shuttering. The superlattice 18 is formed by nonuniformly directing the group III elements 22 and 24 onto the substrate 26 and rotating the substrate 26 across the beams. Periodic ordering is produced by rotation of the substrate 26 through a nonuniform distribution of source fluxes at the rotating substrate 26. The growth rate and substrate rotation rate together determine the superlattice period.
申请公布号 US5415128(A) 申请公布日期 1995.05.16
申请号 US19940209693 申请日期 1994.03.09
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 KAO, YUNG-CHUNG;LIN, HUNG-YU;SEABAUGH, ALAN C.;LUSCOMBE, JAMES H.
分类号 C30B23/02;H01L21/20;H01L21/203;H01L21/205;H01S5/00;(IPC1-7):H01L21/20 主分类号 C30B23/02
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