| 摘要 |
<p>PURPOSE:To decrease the high-frequency noises generated in a power source line and to prevent the generation of faulty operations of circuits, such as fluctuation of signal levels, malfunction and signal delay, by providing the semiconductor device with a capacitance forming electrode of a reference potential disposed partly to face the power source line and a dielectric substance for forming the capacitance disposed between the power source line and capacitance forming electrode arranged to face each other. CONSTITUTION:This semiconductor device is provided with the capacitance forming electrode 4 of the reference potential disposed at least partly to face the power source line 3 and the dielectric substance 10 for forming the capacitance disposed between the power source line 3 and capacitance forming electrode 4 arranged to face each other. A capacitor having the power source line 3 and the capacitance forming electrode 4 as electrodes is formed. A CR filter is equivalently formed by the resistance possessed by the power source line 3 handled as distribution constant circuit and the capacitor, by which the impedance of the power source line 3 is lowered. The high-frequency noises generated in the power source line 3 are decreased by the CR filter, i.e., low-pass filter.</p> |
