| 摘要 |
<p>PURPOSE:To provide the thin-film transistor which is prodncible with high through-put by forming an intersected part of a scanning wiring and a signal wiring as a drain electrode part, the intersected part of a short wiring parallel with this signal wiring and the scanning wiring as a source electrode part and the part held by the drain electrode part of the scanning wiring and the source electrode part as a gate electrode part. CONSTITUTION:The intersected part of the scanning wiring and the signal wiring is formed as the drain electrode part 2, the intersected part of the short wiring parallel with the signal wiring and the scanning wiring as the source electrode part 3 and the part held by the drain electrode part 2 of the scanning wiring and the source electrode part 3 as the respective gate electrode part 1. Namely, the respective electrode parts 1, 2, 3 are formed on the overlapped parts of the scanning wiring to be used as the gate electrode 1, the signal wiring to be used as the drain electrode 2 and the short wiring to be used as the source electrode 3 by the mere overlapping of these wirings. Eventually, the width of the gate electrode 1 is a channel width. As a result, the alignment between the layer is extremely relieved and, therefore, through-put is improved.</p> |
